Grain Growth of .BETA.-Silicon Nitride in RE(RE=Y, Gd, Nd and La)-Mg-Si-O-N Melts
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چکیده
منابع مشابه
Infiltration of Reaction-Bonded Silicon Nitride with Equilibrium Y-Si-O-N Melt
An equilibrium Y-Si-0-N melt was infiltrated to eliminate the open porosity of reaction-bonded silicon nitride at 16001800°C. This oxynitride melt contained two equilibrium phases, a P-Si,N, solid phase and a liquid phase at high temperatures. Before infiltration, porous reaction-bonded silicon nitride compacts were heat-treated to completely transform to the P-Si3N, phase. After infiltration, ...
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ژورنال
عنوان ژورنال: Journal of the Japan Institute of Metals
سال: 2005
ISSN: 0021-4876
DOI: 10.2320/jinstmet.69.719